کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7939397 | 1513188 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Photoluminescence (PL) properties of four blue-violet light emitting InGaN/GaN multiple quantum well (MQW) structures with varying well thickness were studied by means of room temperature PL (RTPL) spectra and temperature-dependent PL (TDPL). From the TDPL, two different kinds of dependencies of PL peak energy with increasing temperature are observed, i.e. an S-shape dependence and an inverted V-shape one. Since the In content in MQW structures is nearly identical for four samples, the difference in luminescence properties is mainly attributed to an increase in localization effects with increasing well thickness.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 113, January 2018, Pages 534-540
Journal: Superlattices and Microstructures - Volume 113, January 2018, Pages 534-540
نویسندگان
Jialin Huang, Wei Liu, Linkai Yi, Mei Zhou, Degang Zhao, Desheng Jiang,