کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7939464 | 1513188 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of indium droplets on growth of InGaN film by molecular beam epitaxy
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of indium droplets on growth of InGaN film by molecular beam epitaxy Effect of indium droplets on growth of InGaN film by molecular beam epitaxy](/preview/png/7939464.png)
چکیده انگلیسی
Effect of indium (In) droplets on InGaN thin films grown by molecular beam epitaxy (MBE) has been investigated. The surface of InGaN covered by In droplets shows a smoother topography than that without droplets, indicating that the presence of In droplets is beneficial to the two dimensional growth. Beneath the In droplets, many ring-like structures are observed. The arrangement of these “ring” shows the movement of the In droplets during the InGaN growth. A qualitative growth model is proposed to explain the evolution of the InGaN surface morphology in In-droplet-induced-epitaxy process, giving an explanation that a local vapor-liquid-solid (VLS) system is preferentially formed at the edge of the droplets, leading to a high growth rate. Furthermore, the energy dispersive X-ray spectroscopy results reveal that the relatively higher In/Ga flux ratio in the region covered by the In droplet results in a locally higher In content.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 113, January 2018, Pages 650-656
Journal: Superlattices and Microstructures - Volume 113, January 2018, Pages 650-656
نویسندگان
Xiantong Zheng, Hongwei Liang, Ping Wang, Xiaoxiao Sun, Zhaoying Chen, Tao Wang, Bowen Sheng, Yixin Wang, Ling Chen, Ding Wang, Xin Rong, Mo Li, Jian Zhang, Xinqiang Wang,