کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7939484 | 1513188 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, the Cp2Mg flux and growth pressure influence to Mg doping concentration and depth profiles is studied. From the SIMS measurement we found that a transition layer exists at the bottom region of the layer in which the Mg doping concentration changes gradually. The thickness of transition layer decreases with the increases of Mg doping concentration. Through analysis, we found that this is caused by Ga memory effect which the Ga atoms stay residual in MOCVD system will react with Mg source, leading a transition layer formation and improve the growth rate. And the Ga memory effect can be well suppressed by increasing Mg doping concentration and growth pressure and thus get a steep Mg doping at the bottom region of p type layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 113, January 2018, Pages 690-695
Journal: Superlattices and Microstructures - Volume 113, January 2018, Pages 690-695
نویسندگان
S.T. Liu, J. Yang, D.G. Zhao, D.S. Jiang, F. Liang, P. Chen, J.J. Zhu, Z.S. Liu, W. Liu, Y. Xing, L.Q. Zhang, W.J. Wang, M. Li, Y.T. Zhang, G.T. Du,