کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7939499 | 1513188 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 â¤Â x â¤Â 0.104)
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Low temperature grown p-AlGaN layer with a small resistivity is crucial to improve the performance of the GaN-based laser diodes (LDs). In this study, growth temperature of the p-AlxGa1-xN (0.08 â¤Â x â¤Â 0.104) layers are controlled to be relatively low, and the influence of hydrogen impurity on the resistivity is investigated in detail. According to the dependence of hole concentration and resistivity on hydrogen impurity concentration, it is found that when Mg doping concentration is unchanged, reducing hydrogen impurity concentration in p-AlxGa1-xN (0.08 â¤Â x â¤Â 0.104) layers could reduce the resistivity effectively, which is attributed to weaken the compensation or passivation effect of hydrogen impurities on Mg acceptors. A p-Al0.09Ga0.91N layer with a low resistivity of 4.6 Ω cm has been achieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 113, January 2018, Pages 720-725
Journal: Superlattices and Microstructures - Volume 113, January 2018, Pages 720-725
نویسندگان
Feng Liang, Jing Yang, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Wei Liu, Shuangtao Liu, Yao Xing, Liqun Zhang, Wenjie Wang, Mo Li, Yuantao Zhang, Guotong Du,