کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7939559 | 1513189 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of constant current stress on the conduction mechanisms of reverse leakage current in UV-A light emitting diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of constant current stress on the conduction mechanisms of reverse leakage current in UV-A light emitting diodes Influence of constant current stress on the conduction mechanisms of reverse leakage current in UV-A light emitting diodes](/preview/png/7939559.png)
چکیده انگلیسی
The influence of constant current stress on the conduction mechanism of reverse leakage current in ultraviolet (UV) light emitting diodes (LEDs) in the UV-A spectral range has been investigated for the first time using temperature-dependent current-voltage measurement from 370 K to 55 K. Below 220 K, variable range hopping mechanism dominates in UV-A LEDs. While, above 220 K, the leakage current is attributed to Poole-Frenkel emission mechanism within the bias range of â3 â¼Â â6 V. With the increasing of the reverse bias, the conduction mechanism transforms from Poole-Frenkel emission to space-charge-limited conduction mechanism. In particular, applying electrical stress yields an alteration of the transition voltage from â7.5 V to â6.5 V. We propose that stress could lead to a reduction of the thermal activation energy, and therefore alters the transition voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 112, December 2017, Pages 105-110
Journal: Superlattices and Microstructures - Volume 112, December 2017, Pages 105-110
نویسندگان
Yingzhe Wang, Xuefeng Zheng, Feng Dai, Jiaduo Zhu, Peixian Li, Xiaohua Ma, Yue Hao,