کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7939647 | 1513189 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of annealing atmosphere on properties of Cu2ZnSn(S,Se)4 thin films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of annealing atmosphere on properties of Cu2ZnSn(S,Se)4 thin films Effect of annealing atmosphere on properties of Cu2ZnSn(S,Se)4 thin films](/preview/png/7939647.png)
چکیده انگلیسی
Earth-abundant Cu2ZnSn(S,Se)4(CZTSSe) thin film photovoltaic absorber layers were fabricated by co-evaporated Cu, ZnS, SnS and Se sources in a vacuum chamber followed by annealing at tubular furnace for 30 min at 550 °C. In this paper, we investigated the metal elements with stoichiometric ratio film to study the effect of annealing conditions of Se, SnS + Se, S and SnS + S atmosphere on the structure, surface morphological, optical and electrical properties of Cu2ZnSn(S,Se)4 thin films respectively. These films were characterized by Inductively Coupled Plasma-Mass Spectrometer, scanning electron microscopy, X-ray diffraction to investigate the composition, morphological and crystal structural properties. The grain size of samples were found to increase after annealing. XRD patterns confirmed the formation of pure polycrystalline CZTSSe thin films at S atmosphere, the optical band gaps are 1.02, 1.05, 1.23, 1.35 eV for Se, SnS + Se, SnS + S and S atmosphere respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 112, December 2017, Pages 311-317
Journal: Superlattices and Microstructures - Volume 112, December 2017, Pages 311-317
نویسندگان
Yuming Xue, Bingbing Yu, Wei Li, Shaojun Feng, Yukun Wang, Shengming Huang, Chao Zhang, Zaixiang Qiao,