کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7939718 1513189 2017 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optimization of Type-II 'W' shaped InGaAsP/GaAsSb nanoscale-heterostructure under electric field and temperature
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Optimization of Type-II 'W' shaped InGaAsP/GaAsSb nanoscale-heterostructure under electric field and temperature
چکیده انگلیسی
Designing of a type-II nanoscale heterostructure and simulating their optical properties is critical for many applications and remains a challenge. This paper reports designing of a complex type - II 'W' shaped symmetric InGaAsP/GaAsSb nano-scale heterostructure grown on InP substrate and mechanism of the transitions taking place within the heterostructure which are responsible for optical properties. In addition, the band alignment, optical gain and lasing wavelength are also studied under the effect of applied external electric field ranging from 10 to 200 kV/cm and variable temperature. On the basis of outcome of the calculations, the proposed heterostructure can be claimed to show a very high optical gain (∼8000/cm) within the MIR (mid infrared) region. Moreover, the results achieved in the study suggest that the application of the both variable temperature and applied external electric field on the heterostructure can control the optical gain as well as lasing wavelength linearly. Due to the linear behavior of the proposed heterostructure, the tunable type -II InGaAsP/GaAsSb nano-scale heterostructure can be claimed as a very suitable heterostructure for the designing of photovoltaic devices operating in the IR region.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 112, December 2017, Pages 507-516
نویسندگان
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