Ambipolarity reduction in DMG asymmetric vacuum dielectric Schottky Barrier GAA MOSFET to improve hot carrier reliability

The surface potential is determined for three different regions by solving 1-D Poisson's and 2-D Laplace equation through separation of variable method to facilitate an optimal model for calculating the subthreshold drain current from Si-SiO2 interface boundary. The developed model results are in good agreement with that of ATLAS-TCAD simulation.