Changes in transconductance(gm) and Ion/Ioff with high-K dielectrics in MX2 monolayer 10Â nm channel double gate n-MOSFET

We investigate monolayer Transition Metal Dichalcogenides (TMDs) of type MX2 (MoS2, MoSe2, MoTe2, WS2 and WSe2) 10 nm n-channel Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) with different dielectrics (SiO2, Al2O3, HfO2 and TiO2) using DFT and NEGF formalism. Results suggest that increasing dielectric constant increases both transconductance (gm) and Ion/Ioff for all type of MX2 channels. Ion/Ioff and gm increases by one order with increase in dielectric constant K. Among all type of MX2 channels considered, WS2 channels results into highest values of gm (∼36.29 uS) and Ion/Ioff (4.3*107) with TiO2 dielectric. Variation in Subthreshold Slope (SS) with increase in dielectric constants are negligibly small, SS value of 58.52 mV/dec is obtained with Al2O3 dielectric for WS2 channel. However, a SS value of ∼60.02 mV/dec is obtained with TiO2 dielectric for all MX2 channels. The results suggest that TiO2 dielectric with WS2 channel can be used for High Performance (HP) and Low Power (LP) devices since it shows large Ion/Ioff (∼107) and SS around 60 mV/dec.