کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7939985 | 1513190 | 2017 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (LG) are demonstrated by using 3-D quantum transport device simulation. The simulated bulk Ge FinFET device exhibits favorable short channel characteristics, including drain-induced barrier lowering (DIBL<10 mV/V), sub threshold slope (SSâ¼64mV/dec.). Electron density distributions in ON-state and OFF-state also show that the simulated devices have large ION/IOFF ratios. Homogenous source/drain doping is maintained and only the channel doping is varied among different operating modes. Also, a constant threshold voltage |VTH| â¼Â 0.31 V is maintained. Moreover, the calculated quantum capacitance (CQ) values of the Ge nanowire emphasizes the importance of quantum confinement effects (QCE) on the performance of the ultra-scaled devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 111, November 2017, Pages 649-655
Journal: Superlattices and Microstructures - Volume 111, November 2017, Pages 649-655
نویسندگان
Vasanthan Thirunavukkarasu, Jaehyun Lee, Toufik Sadi, Vihar P. Georgiev, Fikru-Adamu Lema, Karuppasamy Pandian Soundarapandian, Yi-Ruei Jhan, Shang-Yi Yang, Yu-Ru Lin, Erry Dwi Kurniawan, Yung-Chun Wu, Asen Asenov,