Design and investigation of InAlN/Al14N15N superlattice MOSFET

This advance research analysis presents several transport properties of InAlN/AlN superlattice MOSFET by considering 14N and 15N isotopes. Since the performance of a specific semiconductor device is uniquely dependent on the vital features like scattering, mobility, temperature, conductivity etc. These all characteristics decides the overall enactment and functioning of the devices. Subsequently relaxation time have been obtained for investigating the carrier mobility and drain current. The temperature dependencies of the current flowing through the MOSFET and also the drain current versus drain voltage characteristics of InAlN/Al14N15N superlattice MOSFET have been deliberated. This investigation deals with the modelling of semiconductor device having very high drain current and conductivity.