کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7940230 | 1513192 | 2017 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mechanism on M (MNi, Mo, NiMo) as deep level impurity reducing the TCR of Si-rich CrSi resistive films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
CrSi-M (MNi, Mo, NiMo) resistive films were prepared by magnetron sputtering technique at the same process conditions. Experimental results shows that the metal M can reduce the temperature coefficient of resistance (TCR) of Si-rich CrSi resistive films, and that the resistive films follow the sequence of CrSiMo (6.34Â at%)Â <Â CrSiNi (9.97Â at%)Â <Â CrSiNi (6.08Â at%)Mo (2.47Â at%) according to TCR tending to zero. XRD analysis reveals that CrSi2 is the main conductive phase in the prepared CrSi-M resistive films. In order to explore the reasons that M can reduce the TCR of Si-rich CrSi resistive films, first principles was used to study the influence of M on the performance of CrSi2 from state density and band structure. The first-principles study on M-doped CrSi2 shows that M may exist in CrSi2 semiconductor in the form of deep level impurity, and an energy band model on both Ni and Mo-doped CrSi2 is constructed to reflect the results of first-principles simulation. Based on the established model, a mechanism is proposed that deep level impurities as electron traps capturing electrons and the formation of tight-binding excitons can suppress the non-equilibrium hot carriers against being contributed to the conductivity of CrSi2 semiconductor. As a result, the TCR of Si-rich CrSi resistive films is reduced due to the doping of M as deep level impurity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 109, September 2017, Pages 217-228
Journal: Superlattices and Microstructures - Volume 109, September 2017, Pages 217-228
نویسندگان
X.Y. Wang, Y.P. Liu, B.N. Ding, M.X. Li, T.N. Chen, X.T. Zhu,