کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7940238 | 1398534 | 2017 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Performance improvement of junctionless field effect transistors using p-GaAs/AlGaAs heterostructure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
The performance analysis of junctionless (JL) gate-all-around (GAA) metal oxide semiconductor field effect transistors (MOSFETs) is investigated using the Non-Equilibrium Green's Function (NEGF) formalism. The main problem of JL transistors is found to be the OFF-state current. In the present work, the OFF-state current of such devices is decreased by choosing channel materials with a large band gap and heavy effective mass. Our simulation results show that the OFF-state current of JL transistors with p-type GaAs is less than that of n-type GaAs. Plus, the heterostructure (HES) channel is proposed in this study for improving the device characteristics of JL-FETs as compared to homostructure (HOS). Therefore, p-type GaAs and GaAs/AlGaAs are used as the channel material for HOS and HES devices, respectively. The simulation is performed for different thicknesses of GaAs and AlGaAs with a fixed diameter of 5Â nm for the nanowire. It is shown that the optimum electronic characteristics of HES devices is achieved when the thicknesses of GaAs and AlGaAs layers are chosen to be 0.5Â nm and 4Â nm, respectively. OFF-state current (IOFF) of 5.32Â ÃÂ 10â16Â A, ON-state current (ION) of 6.44Â ÃÂ 10â6Â A, ON/OFF current ratio (ION/IOFF) of 1.21Â ÃÂ 1010, subthreshold slope (SS) of 60.8 mV/dec, drain induced barrier lowering (DIBL) of 4.6Â mV/V, and threshold voltage (VTH) of 330Â mV are obtained for the proposed HES JL-GAA-FET.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 110, October 2017, Pages 305-312
Journal: Superlattices and Microstructures - Volume 110, October 2017, Pages 305-312
نویسندگان
F. Bajelan, A. Yazdanpanah Goharrizi, R. Faez, G. Darvish,