کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7940334 1513193 2017 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Overflow of a dipolar exciton trap at high magnetic fields
ترجمه فارسی عنوان
سرریز یک تله اکسیتون دو قطبی در میدان مغناطیسی بالا
کلمات کلیدی
ایزوتونهای دوقطبی، تله الکترواستاتیک، میدان مغناطیسی، تراکم اکسیژن بالا،
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی
We study laterally trapped dipolar exciton ensembles in coupled GaAs quantum wells at high magnetic fields in the Faraday configuration. In photoluminescence experiments, we identify three magnetic field regimes. At low fields, the exciton density is increased by a reduced charge carrier escape from the trap, and additionally, the excitons' emission energy is corrected by a positive diamagnetic shift. At intermediate fields, magnetic field dependent correction terms apply which follow the characteristics of a neutral magnetoexciton. Due to a combined effect of an increasing binding energy and lifetime, the exciton density is roughly doubled from zero to about 7 T. At the latter high field value, the charge carriers occupy only the lowest Landau level. In this situation, the exciton trap can overflow independently from the electrostatic depth of the trapping potential, and the energy shift of the excitons caused by the so-called quantum confined Stark effect is effectively compensated. Instead, the exciton energetics seem to be driven by the magnetic field dependent renormalization of the many-body interaction terms. In this regime, the impact of parasitic in-plane fields at the edge of trapping potential is eliminated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 108, August 2017, Pages 42-50
نویسندگان
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