A linearity based comparison between symmetric and asymmetric lateral diffusion for a 22Â nm Underlapped DG-MOSFET

The paper presents a comparative study between symmetric and asymmetric straggle architecture, where asymmetric nature is observed by considering straggle in source and drain side alternatively by using the data obtained from 2D numerical simulator Sentaurus TCAD. The analog parameters such as the transconductance (gm), the gain per unit current (gm/Ids)and the intrinsic gain (gmRo) has been analyzed. RF parameters such as intrinsic gate to source and gate to drain capacitances Cgs and Cgd, intrinsic gate to source and gate to drain resistances Rgs and Rgd, the transport delay τm, the unity gain cut off frequency (fT) and the maximum frequency of oscillation (fmax) are also computed using the Non Quasi Static(NQS) approach. The RF feasibility has also been scrutinized with the help of linearity analysis and Harmonic Distortion (HD). The Second and Third order HD (HD2 and HD3) and Total HD(THD) have been analyzed to evaluate distortion performance. The circuit performance is also analyzed by using the devices as a driver MOSFET in a single stage amplifier circuit whose dc performance as well as small signal gain is evaluated and Gain Bandwidth Product (GBW) is also calculated in this paper.