کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7940575 | 1513195 | 2017 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bismuth flux dependence of GaAsBi/GaAs MQWs grown by molecular beam epitaxy using two-substrate-temperature technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Multi-quantum wells (MQWs) of GaAsBi/GaAs were grown by molecular beam epitaxy (MBE) and dependence of its surface morphology, Bi content and optical properties on Bi beam equivalent pressure (BEP) were studied. For the MQWs growth, two-substrate-temperatures (TST) technique was used, where GaAsBi layers were grown at TGaAsBi=350 °C and GaAs layers at TGaAs=550 °C. The segregated bismuth atoms were desorbed by increasing the substrate temperature from TGaAsBi to TGaAs after finishing the growth of each GaAsBi layer of MQWs including the topmost GaAsBi layer. The surface of the topmost GaAsBi layer shows no sign of Bi droplet formation even for the MQWs grown at highest Bi supply. The Bi content increases up to 3.8% in proportional to the Bi BEP and decreases in a higher Bi BEP region.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 106, June 2017, Pages 50-57
Journal: Superlattices and Microstructures - Volume 106, June 2017, Pages 50-57
نویسندگان
Pallavi Kisan Patil, Fumitaro Ishikawa, Satoshi Shimomura,