کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7940732 | 1513197 | 2017 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Different annealing temperature suitable for different Mg doped P-GaN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Different annealing temperature suitable for different Mg doped P-GaN Different annealing temperature suitable for different Mg doped P-GaN](/preview/png/7940732.png)
چکیده انگلیسی
In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 104, April 2017, Pages 63-68
Journal: Superlattices and Microstructures - Volume 104, April 2017, Pages 63-68
نویسندگان
S.T. Liu, J. Yang, D.G. Zhao, D.S. Jiang, F. Liang, P. Chen, J.J. Zhu, Z.S. Liu, X. Li, W. Liu, L.Q. Zhang, H. Long, M. Li,