About bond model of S-type negative differential resistance in GaP LEDs

The bond models are presented that explain the S-type anomaly of GaP LEDs' electrical characteristics at temperatures Т ≤ 120 K. A possible mechanism of negative differential resistance appearing in current-voltage characteristics is proposed, based on the features of the gallium phosphide complex band structure. The conductive zone absolute minimum in this crystal is near the Brillouin zone end. Due to the positive internal bond, controlled by the current, intervalley electron transfer occurs from the side valley to the higher one with the smaller effective electron mass. While the applied voltage is increased, electrons move from the lateral valley to the direct conductive zone bottom and an S-type negative differential resistance region appears.