Structural and optical manipulation of colloidal Ge1-xSnx nanocrystals with experimentally synthesized sizes: Atomistic tight-binding theory

Nontoxic, maintainable and cost-effective group IV semiconductors are gorgeous for an expansive range of electronic and optoelectronic applications, even though the presence of the indirect band gap obstructs the optical performance. However, band structures can be modified from indirect to direct band gaps by constructing the nanostructures or by alloying with tin (Sn) material. In the study presented here, I investigate the impact of ion-centred types, Sn compositions and dimensions on the electronic structures and optical properties in Ge1-xSnx diamond cubic nanocrystals of the experimentally synthesized Sn contents and diameters using the atomistic tight-binding theory (TB) in the conjunction with the configuration interaction description (CI). The analysis of the mechanism suggests that the physical properties are mainly sensitive with ion-centred types (anion (a) and cation (c)), Sn compositions and dimensions of Ge1-xSnx diamond cubic nanocrystals. The reduction of optical band gaps is reported with the increasing diameters and Sn alloying contents. The visible spectral range is obtained allowing for the applications in bio imaging and chemical sensing. The optical band gaps based on tight-binding calculations are in close agreement with the experimental data for Ge1-xSnx nanocrystals with diameter of 2.1 nm, while for Ge1-xSnx nanocrystals with diameter of 2.7 nm there is a discrepancy of 0.4 eV with experimental results and first-principles calculations. An improvement in the luminescence properties of such Ge1-xSnx nanocrystals becomes possible in the presence of the Sn contents. The electron-hole coulomb interaction is reduced with the increasing Sn components, while the electron-hole exchange interaction is increased with the increasing Sn contents. In addition, I have to point out an astonishing phenomenon, stokes shift and fine structure splitting, with the aim for the realization of the entangled source. The stokes shift and fine structure splitting are enhanced with the increasing Sn contents and decreasing diameters as can be elucidated by the trend of ground electron-hole wave function overlaps. Ge1-xSnx nanocrystal with Sn-free content and large size is the best candidate to be a source of entangled photon pairs. Finally, the combinations of direct band gap character and broad tunable visible spectra advise the promise for use in optoelectronic devices as well as solar cells.