Investigation of electrostatic performance for a conical surrounding gate MOSFET with linearly modulated work-function

In this paper, for the first time a continuous variation of work-function based gate metal has been introduced in conical surrounding gate MOSFET. Here, a comparative study of the electrostatic as well as RF characteristics for basic conical surrounding gate MOSFET and the work-function modulated conical MOSFET is carried out using TCAD device simulator. These simulated results reveal that the work-function modulated conical model provides better electrostatic and RF performance in terms of drain current, transconductance, transconductance generation factor, unity gain cut-off frequency and intrinsic delay. An overall performance investigation has been presented for both the aforementioned models and verified using TCAD device simulator from Synopsys.