کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941261 | 1513200 | 2017 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A new low specific on-resistance Hk-LDMOS with N-poly diode
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
A new structure of the laterally diffused metal-oxide-semiconductor transistors (LDMOS) using a high permittivity (Hk) dielectric is proposed, and its mechanism is investigated by 2-D TCAD simulation. The breakdown voltage (BV) is remarkably increased by using the Hk dielectric. Moreover, a reverse biased poly diode is first introduced on the Hk dielectric, which assists the n-drift region forming an electron accumulation layer to reduce the specific on-resistance (Ron,sp) further. Compared with a conventional LDMOS with the same geometry, the BV increases by 24%, and the Ron,sp decreases approximately by 50%. Besides, the proposed structure is less sensitive to the n-drift region doping deviation, and exhibits a larger safe operating area (SOA).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 101, January 2017, Pages 180-190
Journal: Superlattices and Microstructures - Volume 101, January 2017, Pages 180-190
نویسندگان
Jing Deng, Mingmin Huang, Junji Cheng, Xinjiang Lyu, Xingbi Chen,