کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941326 | 1513200 | 2017 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Unintentional gallium incorporation in InGaN layers during epitaxial growth
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Unintentional gallium incorporation in InGaN layers during epitaxial growth Unintentional gallium incorporation in InGaN layers during epitaxial growth](/preview/png/7941326.png)
چکیده انگلیسی
Unintentional gallium incorporation was observed and investigated in the epitaxial growth of InGaN by metalorganic vapor phase epitaxy. InGaN was grown without intentional gallium precursor and the gallium incorporation rate was found not dependent on TEGa source but was significantly influenced by temperature and TMIn source flow. The source of the unintentional gallium incorporation is confirmed to be from the flow distributor of the reactor. The incorporation mechanism was analyzed to be the diffusion of resultant of transmetalation reaction between TMIn or its decomposed products (for example DMIn) and residual gallium. Due to the unintentional gallium incorporation, the growth rate and indium content of InGaN layer are determined by indium source, gallium source and the growth temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 101, January 2017, Pages 323-328
Journal: Superlattices and Microstructures - Volume 101, January 2017, Pages 323-328
نویسندگان
Kun Zhou, Huaijin Ren, Masao Ikeda, Jianping Liu, Yi Ma, Songxin Gao, Chun Tang, Deyao Li, Liquan Zhang, Hui Yang,