کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7941604 1513201 2016 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors
چکیده انگلیسی
The AlN/GaN heterostructure field-effect transistors with different GaN cap layer thicknesses were fabricated. With the calculated electron mobility and polarization charge distribution, the influence of different GaN cap layer thicknesses on electron mobility was determined by experiment and theoretical calculation. It is found that the increase of the GaN cap layer thickness can weaken the polarization Coulomb field scattering, and improve the electron mobility. This would be a possible approach to improve the performance of AlN/GaN HFETs by choosing a proper GaN cap layer thickness.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 100, December 2016, Pages 358-364
نویسندگان
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