کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7941677 1513201 2016 20 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electron transport in nanocrystalline SiC films obtained by direct ion deposition
ترجمه فارسی عنوان
انتقال الکترون در سیلیسیم های نانوکریستالیک حاصل از رسوب یون مستقیم
کلمات کلیدی
کاربید سیلیکون نانوکریستال، فیلم های نازک حمل و نقل الکترونی، تونلینگ، کوانتومی ابعاد
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی
Electrical conductivity of nanocrystalline SiC films obtained by direct ion deposition was investigated within the temperature interval from 2 to 770 K. It were investigated the samples of films with 3С-SiC polytype structure and the heteropolytype films formed by layers of different polytypes SiC (3C-SiC/21R-SiC, 21R-SiC/27R-SiC, 3C-SiC/15R-SiC). The films had n-type conductivity that ensured a small excess of silicon ions. The thermally activated character of electron transport in the 3С-SiC polytype films was established. In the heteropolytype films the temperature dependence of the electrical resistance was described by the relation R(T) = R0 × exp[-kT/E0]. It was shown that the charge transport mechanism in the heteropolytype samples is electron tunneling through potential barriers formed by the conduction band offset in the contact region of the heterojunction. Tunnel charge transport occurs due to the presence of discrete energy states in the forbidden band caused the dimensional quantization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 100, December 2016, Pages 596-604
نویسندگان
, , ,