کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941815 | 1513201 | 2016 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A study on non-stoichiometric p-NiOx/n-Si heterojunction diode fabricated by RF sputtering: Determination of diode parameters
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
NiOx thin films were grown on n-Si substrates by radio frequency sputtering technique for the fabrication of a heterojunction p-n diode. X-ray diffraction, scanning electron microscope and atomic force microscope results revealed that NiOx films had nano sized polycrystalline nature. The X-ray energy dispersive analysis was used to determine elemental composition of the NiOx films. High quality vacuum evaporated silver (Ag) (ohmic) layer and nickel (Ni) (measurement electrode) dots were used to make contacts to the p-NiOx/n-Si heterojunction, in such a way that 8 Ni/p-NiOx/n-Si/Ag devices were fabricated. Current-voltage (I-V) and capacitance-voltage (C-V) measurements of the p-NiOx/n-Si heterojunctions showed good diode characteristics and the average barrier height has been calculated as 0.652Â eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 100, December 2016, Pages 924-933
Journal: Superlattices and Microstructures - Volume 100, December 2016, Pages 924-933
نویسندگان
Maria Luisa Grilli, Sakir Aydogan, Mehmet Yilmaz,