کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7941901 1513202 2016 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Reduction of epitaxial defects on 4°-off 4HSiC homo-epitaxial growth by optimizing in-situ etching process
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Reduction of epitaxial defects on 4°-off 4HSiC homo-epitaxial growth by optimizing in-situ etching process
چکیده انگلیسی
The investigations of in-situ etching of 4HSiC epi-growth on 4° off-axis 100 mm diameter substrates under different conditions have been carried out in a commercial warm-wall multi-wafer planetary reactor. The surface morphologies of the as-etched substrates have been characterized by atomic force microscopy on 20 × 20 μm2. Based on the step height and roughness mean square, the best etching condition for 4HSiC 4° off-axis substrates was determined to be H2 + HCl at 1500 °C for 10 min. With the optimized in-situ etching process, high quality 4HSiC epitaxial layers with excellent surface morphology have been obtained, and the defect density is lowered to 0.45 cm−2 resulting in a projected 2 × 2 mm die yield of ∼98%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 99, November 2016, Pages 145-150
نویسندگان
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