Effect of growth rate on the structure and physical properties of Mo doped ZnO films

In this work, Mo-doped ZnO (MZO) films were prepared on glass substrate via magnetron co-sputtering of ZnO and Mo targets. Based on the x-ray diffraction (XRD) measurements, all films are crystallized into wurtzite ZnO structure with its c-axis perpendicular to the substrates. Higher growth rate leads to slightly decrease of the optical energy gap from 3.35 eV to 3.25 eV. Hall effect measurements were carried out which suggested the lowest resistivity of 2.8 × 10−3 Ω cm. In addition, UV-vis measurement shows that the transmittance in the visible light region is ∼80%, which indicates that MZO film is suitable for potential transparent optoelectronic applications.