کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7941929 1513202 2016 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Defect-related electroluminescence from metal-oxide-semiconductor devices with ZrO2 films on silicon
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Defect-related electroluminescence from metal-oxide-semiconductor devices with ZrO2 films on silicon
چکیده انگلیسی
Defect-related electroluminescence (EL) from ZrO2 films annealed under different atmosphere has been realized by means of electrical pumping scheme of metal-oxide-semiconductor (MOS) devices. At the same injection current, the acquired EL from the MOS device with the vacuum-annealed ZrO2 film is much stronger than that from the counterpart with the oxygen-annealed ZrO2 film. This is because the vacuum-annealed ZrO2 film contains more oxygen vacancies and Zr3+ ions. Analysis on the current-voltage characteristic of the ZrO2-based MOS devices indicates the P-F conduction mechanism dominates the electron transportation at the EL-enabling voltages under forward bias. It is tentatively proposed that the recombination of the electrons trapped in multiple oxygen-vacancy-related states with the holes in the defect level pertaining to Zr3+ ions brings about the EL emissions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 99, November 2016, Pages 186-191
نویسندگان
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