کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941930 | 1513202 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low temperature iron gettering by grown-in defects in p-type Czochralski silicon
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Low temperature iron gettering by grown-in defects in p-type Czochralski silicon Low temperature iron gettering by grown-in defects in p-type Czochralski silicon](/preview/png/7941930.png)
چکیده انگلیسی
Low temperature iron gettering in as-grown boron doped Czochralski silicon (Cz-Si) at temperatures between 220 and 500 °C is studied using microwave-photoconductive decay based minority carrier lifetime measurements. Scanning infrared microscopy technique is used to study the defect density/size distribution in the samples before and after anneal. It is found that the decrease of interstitial iron (Fei) concentration shows a double exponential dependence on annealing time at all temperatures. This suggests the existence of two sinks for Fei. Meanwhile, the observed bulk defect densities and sizes in contaminated and as-grown samples are nearly the same, implying that the grown-in defects could be the gettering centers in this process. The results are important for understanding and controlling low temperature Fei gettering during processing of Cz-Si based devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 99, November 2016, Pages 192-196
Journal: Superlattices and Microstructures - Volume 99, November 2016, Pages 192-196
نویسندگان
Haiyan Zhu, Xuegong Yu, Xiaodong Zhu, Yichao Wu, Jian He, Jan Vanhellemont, Deren Yang,