کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7941933 1513202 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers
چکیده انگلیسی
We investigated the gamma-ray irradiation effect on 4H-SiC device process-induced defects by photoluminescence (PL) imaging and deep level transient spectroscopy (DLTS). We found that basal plane dislocations (BPDs) that were present before the irradiation were eliminated by gamma-ray irradiation of 1 MGy. The reduction mechanism of BPD was discussed in terms of BPD-threading edge dislocation (TED) transformation and shrinkage of stacking faults. In addition, the entire PL image was gradually darkened with increasing absorbed dose, which is presumably due to the point defects generated by gamma-ray irradiation. We obtained DLTS peaks that could be assigned to complex defects, termed RD series, and found that the peaks increased with absorbed dose.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 99, November 2016, Pages 197-201
نویسندگان
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