Effect of low energy electron beam irradiation on Shockley partial dislocations bounding stacking faults introduced by plastic deformation in 4H-SiC in its brittle temperature range

Low energy electron beam irradiation (LEEBI) effect on Shockley-type stacking faults introduced in 4H-SiC by plastic deformation have been studied by cathodoluminescence. It is shown that LEEBI does not enhance the mobility of dislocations dragging stacking faults under plastic deformation. Contrary new stacking faults are created under LEEBI. The obtained results are explained under assumption that the stacking faults introduced in 4H-SiC under deformation at moderate temperatures and by LEEBI at room temperature are dragged by partial dislocations of different types.