کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941954 | 1513203 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
X-ray excited luminescence of Ga- and In-doped ZnO microrods by annealing treatment
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ga- and In-doped ZnO microrods were prepared by low temperature hydrothermal process, and the effect of annealing temperature on morphology, crystallization, photoluminescence and X-ray excited luminescence were deeply researched. The results showed that both Ga- and In-doped ZnO microrods were possessed of a good crystalline quality and exhibited an intense visible emission band with a blue-shift under X-ray excitation. This blue-shift of the visible luminescence could be ascribed to the different contributions of the defect emissions, i.e. the increase in the oxygen vacancy (VO) emission and the decrease of the oxygen interstitial (Oi) emission. Moreover, a strong ultraviolet luminescence was also obtained by further hydrogen annealing. It is expected that Ga- and In-doped microrods are promising candidates for development of fast and high-spatial-resolution X-ray imaging detectors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 98, October 2016, Pages 351-358
Journal: Superlattices and Microstructures - Volume 98, October 2016, Pages 351-358
نویسندگان
Qianli Li, Xiaolin Liu, Mu Gu, Shiming Huang, Juannan Zhang, Chen Ni, Bo Liu, Yahua Hu, Qiang Wu, Shuning Zhao,