کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79420 | 49356 | 2011 | 5 صفحه PDF | دانلود رایگان |
Starting from a small area cell published in 1993, CuInS2 technology has been continuously improved with respect to performance and manufacturability. Major milestones include successful preparation by rapid thermal processing, a monolithically integrated module test structure on a 5×5 cm2 substrate, implementation of an industrial pilot line, incorporation of gallium for higher open circuit voltages and better performance and demonstration of Cd-free devices. Phase formation, reaction pathways and interdiffusion mechanisms have been investigated and modelled as have been electronic and device properties such as current transport. This review summarizes the most significant aspects of development and our current understanding of the technology.
Journal: Solar Energy Materials and Solar Cells - Volume 95, Issue 6, June 2011, Pages 1441–1445