کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7942005 1513213 2015 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters
چکیده انگلیسی
Two different sets of structural parameters are used to fabricate InGaN/GaN multiple quantum well (MQW) green light-emitting diodes (LEDs) which have nearly the same light emission wavelength. It is found that, compared with the thin-well but high-In-content MQW LED, the efficiency droop of InGaN LED with the thick-well but low-In-content MQWs is less significant. Such reduction of droop may be attributed to the less electron overflowing, larger volume of active region and weaker delocalization effect, induced by the thicker well layers and lower In content in the latter.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 50-55
نویسندگان
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