کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7942038 | 1513213 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High switching speed copper phthalocyanine thin film transistors with cut-off frequency up to 25Â kHz
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The characteristics of high frequency and high speed are demonstrated in vertical structure organic thin film transistors (VOTFTs) fabricated by DC magnetron sputtering and vacuum evaporation. The saturated current-voltage characteristics can be determined by drain-source negative bias voltage. Responsive frequency of the device is as high as 20Â kHz when rectangular wave dynamic signal is applied to the gate-source electrode, and switch characteristic time reaches the microsecond. The unsaturated current-voltage characteristics are observed when the drain-source bias voltage is positive. In the condition of VDSÂ =Â 3Â V and VGSÂ =Â 0Â V, the drain-source current IDS is 2.986Â ÃÂ 10â5 A, and the current density is 1.194Â mA/cm2. Cut-off frequency fc is 25Â kHz when a small sine wave dynamic signal is applied to the gate-source electrode. The volt-ampere characteristic of VOTFTs transfers from linear to nonlinear with increasing of drain-source bias voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 104-109
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 104-109
نویسندگان
Zeying Wang, Dong Xing Wang, Yongshuang Zhang, Yueyue Wang,