کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7942039 | 1513213 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of the carrier transport in presence of backscattering in InAs nanowire based MOSFET after GaN
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
The fetching of a single-flux scattering theory of the InAs nanowire based MOSFET has been presented here. The backscattering coefficient has been studied for 1 nm, 5 nm and 10 nm nanowire radius. The calculations are made for <100>, <110> and <111> nanowire orientations. It has been found that the value of the backscattering coefficient increased as the radius of the nanowire is increased from 1 nm to 10 nm but the spacing between <100>, <110> and <111> nanowire orientations decreased. The drain current IDsat â (VGS â VT) characteristics of InAs ballistic nanowire (5 nm radius) has been discussed in detail. Also, the significant drain current IDsat versus electric field (V/m) characteristics of nonballistic InAs nanowire (5 nm radius) MOSFET transistor for different orientations are obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 110-115
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 110-115
نویسندگان
Kaushik Mazumdar, Vishwanath Pratap Singh, Ahna Sharan, Aniruddha Ghosal,