کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7942074 | 1513213 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optimization of high optical gain in type-II In0.70Ga0.30As/GaAs0.40Sb0.60 lasing nano-heterostructure for SWIR applications
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Most of the nano-heterostructures exhibiting lasing action in NIR (near infra-red) region that have been modeled and simulated are based on type-I category. The nano-scaled lasing heterostructures, however, of type-II category operating in SWIR (short wave infra-red) region have not been well studied. In this paper, for SWIR generation, an M-shaped type-II In0.70Ga0.30As/GaAs0.40Sb0.60 symmetric lasing nano-heterostructure has been designed. In order to simulate the optical gain, firstly the wave functions associated with conduction and valence sub-bands, carrier densities within the bands, energy band dispersion relations for the quantum well structure, optical matrix elements and finally optical gain have been studied by utilizing the six band k.p method. For the injected carrier concentration of 5 Ã 1012/cm2, the optimized optical gain within TE mode is as high as â¼9000/cm at the wavelength of â¼1.95 μm, thus providing a very important alternative material system for the generation of SWIR wavelength region.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 154-160
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 154-160
نویسندگان
H.K. Nirmal, Nisha Yadav, F. Rahman, P.A. Alvi,