Manipulating spin spatial splitter in a δ-doped semiconductor nanostructure with zero average magnetic field

Recently, based on a novel magnetic nanostructure with zero average magnetic field, a spin spatial splitter with a considerable spin-polarized lateral displacement was proposed [Appl. Surf. Sci. 313 (2014) 545]. To further manipulate its spin-polarized behaviour, in this work, we introduce a tunable δ-potential into the device by the atomic layer doping, and calculated its effect on spin-polarized lateral displacement of the electron. Both magnitude and sign of spin polarization are found to be sensitive to the δ-doping. Therefore, such a device can serve as a structurally-controllable spin-polarized source for spintronics applications.