کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7942144 | 1513213 | 2015 | 29 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Capacitance modeling of gate material engineered cylindrical/surrounded gate MOSFETs for sensor applications
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
This paper presents charge based analytical drain current and capacitance model of material engineered Cylindrical/Surrounded Gate (CGT/SGT) MOSFET with nanogap cavity region for sensor applications. Material engineered i.e. dual material gate provides improvement in Short Channel Effects (SCEs) and cylindrical shape nanogap cavity region is used for sensing of biomolecule strength. The material engineered CGT/SGT MOSFET sensor electrically detect the targeted biomolecules of different strength by change in drain current and gate capacitance. Analysis has been carried out by using unified charge control based model derived from Poisson's equation. It is shown that sensitivity of changing biomolecules strength is more in gate capacitance than the drain current. The results so obtained are in good agreement with the 3D simulated data which validate the model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 271-280
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 271-280
نویسندگان
Jay Hind Kumar Verma, Yogesh Pratap, Subhasis Haldar, R.S. Gupta, Mridula Gupta,