کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7942186 | 1513213 | 2015 | 20 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Droop-multimode trade-off in GaN-InGaN LEDs: Effect of polarization-matched AlInGaN blocking layers
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Polarization-matched graded AlInGaN electron blocking layer (EBL) and hole blocking layer (HBL) are proposed to reduce efficiency droop in GaN-InGaN light-emitting diodes (LEDs). Five different structures have been simulated to study the effect of different blocking layers and a significant reduction in the efficiency droop has been noticed, from 52% in conventional structure to 2% in polarization-matched graded AlInGaN EBL and HBL structure at a current density of 1000Â AÂ cmâ2. This has been achieved at the cost of multimode emission from such polarization-matched blocking layers which sets a trade-off between efficiency droop and multimode emission. The AlInGaN layer can therefore be characterized by droop cut-off condition (DCC) and multimode cut-off condition (MCC). For the best structure proposed in this paper, simulations indicate a DCC having Al and In composition of 0.10 and 0.15 respectively; and an MCC having Al and In composition of 0.08 and 0.23 respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 344-353
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 344-353
نویسندگان
Vikas Pendem, Sonachand Adhikari, Manish Mathew, Sumitra Singh, Suchandan Pal,