Modelling and simulation of subthreshold behaviour of cylindrical surrounding double gate MOSFET for enhanced electrostatic integrity

In this paper, a physics based model has been presented for the Cylindrical Surrounding Double Gate (CSDG) Nano-wire MOSFET. The analytical model is based on the solution of 2-D Poisson's equation in a cylindrical coordinate system using super-position technique. CSDG MOSFET is a cylindrical version of double gate MOSFET which offers maximum gate controllability over the channel. It consists of an inner gate and an outer gate. These gates render effective charge control inside the channel and also provide excellent immunity to short channel effects. Surface potential and electric field for inner and outer gate are derived. The impact of channel length on electrical characteristics of CSDG MOSFET is analysed and verified using ATLAS device simulator. The model is also extended for threshold voltage modelling using extrapolation method in strong inversion region. Drain current and transconductance are compared with conventional Cylindrical Surrounding Gate (CSG) MOSFET. The excellent electrical performance makes CSDG MOSFET promising candidates to extend CMOS scaling roadmap beyond CSG MOSFET.