کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7942259 | 1513213 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer](/preview/png/7942259.png)
چکیده انگلیسی
This paper principally presents the numerical investigation of electron blocking layers (EBL) structures with different Al concentration gradient changing in AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs). Compared to conventional EBL structure with constant Al composition, the LED with inverted-V-shaped EBL structure has higher output power and carriers recombination rate, but the efficiency droop will decrease obviously while the electron leakage current can reduce much as well. Therefore, the result indicates that appropriate Al component in LED can enhance electron and hole recombination rate in the active region. The improved performance is mainly attribute the sufficient electron-barrier height and relatively higher hole injection efficiency which results from the mitigated band-bending.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 467-473
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 467-473
نویسندگان
Xuancong Fan, Huiqing Sun, Xuna Li, Hao Sun, Cheng Zhang, Zhuding Zhang, Zhiyou Guo,