A novel dynamically configurable electrostatically doped silicon nanowire impact ionization MOS

In this manuscript a novel dynamically configurable electrostatically doped silicon nanowire impact ionization MOS (E-SiNW-IMOS) based on dopant-free technology is investigated. The key attribute of the proposed device is its polarity controlled dynamic reconfigurability of charge gating mechanism from impact ionization to band-to-band tunneling. This ensures that same device can act as E-SiNW-IMOS or E-SiNW-TFET depending on bias conditions.