کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7942581 | 1513225 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of IZO/IGZO dual-active-layer for low-voltage-drive and high-mobility thin film transistors based on an ALD grown Al2O3 gate insulator
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We successfully integrated the high-performance oxide thin film transistors with novel IZO/IGZO dual-active-layers. The results showed that dual-active-layer (IZO/IGZO) TFTs, compared with single active layer IGZO TFTs and IZO TFTs, exhibited the excellent performances; specifically, a high field effect mobility of 14.4Â cm2/Vs, a suitable threshold voltage of 0.8Â V, a high on/off ratio of more than 107, a steep sub-threshold swing of 0.13Â V/dec, and a substantially small threshold voltage shift of 0.51Â V after temperature stress from 293Â K to 353Â K. In order to understand the superior performance, the density-of-states (DOS) were investigated based on the temperature-dependent transfer curves. The superior electric properties were attributed to the smaller DOS and higher carrier concentration. The proposed IZO/IGZO-TFT in this paper can be used as driving devices in the next-generation flat panel displays.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 76, December 2014, Pages 156-162
Journal: Superlattices and Microstructures - Volume 76, December 2014, Pages 156-162
نویسندگان
Xingwei Ding, Hao Zhang, He Ding, Jianhua Zhang, Chuanxin Huang, Weimin Shi, Jun Li, Xueyin Jiang, Zhilin Zhang,