The study on characterizations of SrTiO3 thin films with different growth temperatures

Strontium titanate (SrTiO3) thin films were deposited on cleaned p-type (1 0 0) oriented silicon substrates using radio frequency (RF) magnetron sputtering method at a substrate temperatures of 200 °C, 300 °C, 400 °C and 500 °C. During deposition, sputtering pressure (PS) was maintained at 3.9 × 10−3 Torr using argon (Ar) gas, and RF power (PRF) was set to a constant value of 100 W for all experiments. Crystalline quality, surface morphology and band gap of the films were investigated by X-ray diffraction (XRD) analysis, atomic force microscopy (AFM) and photoluminescence (PL) measurements. Experimental results showed crystalline quality, and surface morphology of the films were remarkably improved by high substrate temperature. In addition to above analyzes, SrTiO3/p-Si structure deposited at 500 °C substrate temperature have been investigated using temperature dependent current-voltage (I-V-T) characteristics in the temperature range of 110-350 K by steps of 30 K due to its better characteristics. The ideality factor (n), barrier height (Φb) and series resistance (Rs) values were extracted. Moreover, Φb and Rs values were recalculated using Norde's method.