کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7942645 1513225 2014 18 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigation of hole-injection in α-NPD using capacitance and impedance spectroscopy techniques with F4TCNQ as hole-injection layer: Initial studies
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Investigation of hole-injection in α-NPD using capacitance and impedance spectroscopy techniques with F4TCNQ as hole-injection layer: Initial studies
چکیده انگلیسی
The charge accumulation leading to injection at the organic interface in the sequentially doped hole-only device structure is studied using capacitance and impedance based spectroscopic techniques. In this paper, we investigate the role of p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in the charge transport properties of N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α-NPD) through sequential deposition. We show that the hole injection into α-NPD increases with the increase of interlayer (F4TCNQ) thickness by correlating the current density-voltage, capacitance-voltage, capacitance-frequency and impedance measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 76, December 2014, Pages 385-393
نویسندگان
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