کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7942705 | 1513236 | 2014 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal annealing effects on the optical and structural properties of (1Â 0Â 0) GaAs1âxBix layers grown by Molecular Beam Epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Thermal annealing effects on the optical and structural properties of (1Â 0Â 0) GaAs1âxBix layers grown by Molecular Beam Epitaxy Thermal annealing effects on the optical and structural properties of (1Â 0Â 0) GaAs1âxBix layers grown by Molecular Beam Epitaxy](/preview/png/7942705.png)
چکیده انگلیسی
The effects of long time thermal annealing at 200 °C on the optical and structural properties of GaAs1âxBix alloys were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM) and photoluminescence (PL). FESEM images show that bismuth islands nucleate on the surface and their diameter increases after annealing. It was observed a PL intensity enhancement and a small blue shift in PL peak energy after thermal annealing at 200 °C for 3 h of GaAs1âxBix alloys which was associated to the reduction of the density of defects. However these defects are not completed removed by thermal annealing although an important PL intensity improvement is observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 65, January 2014, Pages 48-55
Journal: Superlattices and Microstructures - Volume 65, January 2014, Pages 48-55
نویسندگان
O.M. Lemine, A. Alkaoud, H.V. Avanço Galeti, V. Orsi Gordo, Y. Galvão Gobato, Houcine Bouzid, A. Hajry, M. Henini,