کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7943091 | 1513237 | 2013 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Numerical study on the performance metrics of lightly doped drain and source graphene nanoribbon field effect transistors with double-material-gate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, we perform a theoretical study on the performance metrics of the lightly doped drain and source (LDD) of double-material-gate graphene nanoribbon field effect transistors (GNRFETs). A quantum model based on the non-equilibrium Green's function (NEGF) coupled with a three dimensional Poisson equation under the ballistic limits in the mode space is applied. To highlight the superior performances of LDD structure, comparisons have been made between single-material-gate GNRFETs with conventional doping (C-GNRFETs), single-material-gate GNRFETs with LDD (LDD-GNRFTEs), double-material-gate GNRFETs with conventional doping (DM-GNRFETs) and double-material-gate GNRFETs with LDD (LDD-DM-GNRFETs). The results demonstrates that LDD-DM structure has lower leakage current, better sub-threshold swing performance, larger Ion/Ioff ratio, lower delay time and higher cutoff frequency, which indicates LDD-DM-GNRFETs a promising material for high-speed and lower power applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 64, December 2013, Pages 227-236
Journal: Superlattices and Microstructures - Volume 64, December 2013, Pages 227-236
نویسندگان
Wei Wang, Xiao Yang, Na Li, Lu Zhang, Ting Zhang, Gongshu Yue,