کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7943391 1513241 2013 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A comparative study of the structural and electrical properties of n-type InGaN epilayer grown by MBE and commercially
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
A comparative study of the structural and electrical properties of n-type InGaN epilayer grown by MBE and commercially
چکیده انگلیسی
This work reports the growth of n-In0.27Ga0.73N/GaN/AlN epitaxial layer on Si(1 1 1) substrate by using plasma-assisted molecular beam epitaxy (MBE) and commercially obtained n-In0.08Ga0.92N/AlN. As-grown and commercial thin films were characterized by using field emission scanning electron microscopy, atomic force microscopy, and high-resolution X-ray diffraction. A high work function metal (Pt) was deposited as metal contact on the thin films, and the electrical characteristics of the films pre- and post-annealed at 500 °C were studied under 3 V. Results show that the electrical characteristics of post-annealed thin films are better than those of pre-annealed thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 60, August 2013, Pages 224-230
نویسندگان
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