Features of the potential barrier and current flow in the narrow Schottky diodes

The correlation between the numerical values of electrophysical parameters of the forward and reverse current-voltage characteristics of narrow SD was founded. Energy diagram of the narrow SD was created and its corresponding energy parameters were evaluated. It has been shown that the conductivity in the narrow Au-nGaAs SD qualitatively and quantitatively well described by energy model real metal-semiconductor contacts with AEF.